STMicroelectronics
STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, Automotive Grade, 600 V Drain-to-Source Voltage, 10 A Continuous Drain at 25°C, 430 mOhm Rds(on) at 5 A / 10 V, DPAK (TO-252) surface-mount package, AEC-Q101 qualified.
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ DM2 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 0V, 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 430mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 614 pF @ 100 V |
The STD12N60DM2AG: AEC-Q101 qualified for automotive applications. The gate charge is 14.5 nC at 10 V, and the input capacitance is 614 pF at 100 V drain-source — both relatively low figures that keep the gate-drive power requirement modest and support fast switching transitions in hard-switched topologies.
The DPAK (TO-252) footprint is widely used in automotive power stages.
