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STD12N50DM2

STMicroelectronics

STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, Drain to Source Voltage: 500 V, Continuous Drain Current: 11 A, On-Resistance: 350 mOhm, Gate Charge: 16 nC, DPAK package.

STMicroelectronics STD12N50DM2
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

STD12N50DM2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ DM2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs350mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds628 pF @ 100 V

Technical details

500 V N-channel MOSFET in DPAK — MDmesh DM2 series

The STD12N50DM2 is housed in a surface-mount DPAK (TO-252) package, suitable for automated assembly in high-density power supplies, offline flyback converters, PFC stages, and motor-drive auxiliary supplies.

Switching and conduction loss budget

The 350 mΩ Rds(on) at 10 V gate drive is the conduction loss anchor: at 5.5 A the dissipation is about 10.6 W, which must be removed through the DPAK's thermal pad. The input capacitance of 628 pF at 100 V Vds keeps the Miller plateau short, aiding fast turn-on and turn-off transitions.

The gate-source voltage is rated ±25 V, giving margin against ringing in hard-switched topologies.

STD12N50DM2
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