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STMicroelectronics STD120N4LF6 — Discrete Semiconductors

STD120N4LF6 MOSFET N-CH 40V 80A DPAK, AEC-Q101, 4mOhm

MPNSTD120N4LF6
Active

STMicroelectronics DeepGATE™, STripFET™ VI series, STD120N4LF6, N-Channel MOSFET, 40 V Vdss, 80 A continuous drain, 4 mOhm max Rds(on) at 10 V, 80 nC gate charge, DPAK surface-mount, AEC-Q101 qualified, -55°C to 175°C junction.

$2.1700Ref. price · indicative, final on quote
STMicroelectronics STD120N4LF6 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesDeepGATE™, STripFET™ VI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD120N4LF6 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4300 pF @ 25 V

Product details

Automotive-grade 40 V N-channel — the conduction-loss story

The STD120N4LF6: The headline figure is a maximum Rds(on) of 4 mOhm at 40 A, 10 V gate drive — that is the conduction-loss floor for a switching design, and it is specified as a max, not a typical, so the worst-case thermal budget is known upfront.

AEC-Q101 and the 175°C junction — where this part lives

This part carries AEC-Q101 qualification and a junction temperature range from -55°C to 175°C.

DPAK package — the board-level footprint

For 110 W maximum power dissipation at the case, a 2 oz copper pour of at least 1 in² on the drain tab is typical to keep the junction within the 175°C limit under full load.

Frequently asked questions

Is STD120N4LF6 AEC-Q101 qualified?

Yes, the STD120N4LF6 is AEC-Q101 qualified, making it suitable for automotive applications that require the stress-test qualification for discrete semiconductors.

What is the Vgs(th) of STD120N4LF6?

The maximum gate threshold voltage is 3 V at a drain current of 250 µA. This means the part begins to conduct with a gate drive above 3 V, but full enhancement requires the 10 V drive specified for the 4 mOhm Rds(on).