STD120N4F6

STMicroelectronics

STMicroelectronics STD120N4F6, N-Channel MOSFET, 40 V Vdss, 80 A continuous drain, 4 mOhm Rds(on) at 10 V, DPAK surface mount, AEC-Q101 qualified.

STMicroelectronics STD120N4F6
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD120N4F6 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3850 pF @ 25 V

Technical details

The STD120N4F6 is listed as obsolete. If you have this part on a BOM line, you are looking at a last-time-buy or surplus-channel procurement.

4 mOhm at 40 A — the switching spec that matters

That is a low on-resistance for a 40 V device in a DPAK, which keeps conduction losses down in a 80 A continuous-rated switch. The gate charge is 65 nC at 10 V, so the driver needs to source that charge for fast switching edges — budget the gate drive current against the switching frequency.

Automotive-grade construction

This is an AEC-Q101 qualified device from the DeepGATE and STripFET VI series, meaning it was characterised and released for automotive under-hood or chassis-domain switching applications. The DPAK (TO-252) footprint is a standard surface-mount power package, and the part is compatible with that footprint — the same pad layout used across many 40 V to 60 V N-channel MOSFETs in this class.

STD120N4F6
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