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STMicroelectronics STD11NM65N — Discrete Semiconductors

STD11NM65N N-Channel MOSFET, 650 V, 11 A, DPAK

MPNSTD11NM65N
Active

STMicroelectronics MDmesh™ II N-channel MOSFET, STD11NM65N, 650 V Vdss, 11 A Id, 455 mOhm Rds(on) at 10 V, 29 nC Qg, DPAK surface-mount package.

$3.3000Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesMDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD11NM65N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs455mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 50 V

Product details

650 V, 11 A N-channel in a DPAK — the SMPS and PFC workhorse

For a 150 W flyback running at 0.5 A average drain current, that's about 0.11 W conduction loss — well inside the 110 W package dissipation limit, but the real thermal limiter is the PCB copper area under the DPAK tab.

A 29 nC gate charge means a 100 mA gate-driver IC can switch this FET at roughly 3.4 MHz before the drive current becomes the limiting factor — in practice you'll run it well below that in a hard-switched converter, but the low Qg keeps the driver losses manageable. The 800 pF Ciss is low for a 650 V, 11 A device, which helps keep the Miller plateau short and reduces cross-conduction during the switching transition.

Frequently asked questions

What is the closest functional equivalent or replacement for STD11NM65N?

The MDmesh™ V series offers the STD11N65M5 (650 V, 9 A, 480 mOhm Rds(on), 17 nC Qg) in the same DPAK package. It is a lower-current, lower-gate-charge variant. For a higher-current alternative within the same voltage class, the STD18N65M5 (15 A, 220 mOhm) or STD16N65M5 (12 A, 299 mOhm) are options — both are MDmesh™ V parts with different Rds(on) and gate charge trade-offs. None are pin-for-pin drop-in replacements without checking the gate-drive and thermal budget.