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STMicroelectronics STD11NM60N-1 — Discrete Semiconductors

STD11NM60N-1 MDmesh II N-Ch MOSFET, 600V, 10A, TO-251

MPNSTD11NM60N-1
Obsolete

STMicroelectronics MDmesh™ II series, STD11NM60N-1, N-Channel MOSFET, 600V Vdss, 10A Id, 450mOhm Rds(on), 31nC Qg, TO-251-3 I-PAK, Through Hole, 150°C TJ.

$1.6100Ref. price · indicative, final on quote
STMicroelectronics STD11NM60N-1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD11NM60N-1 specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation90W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds850 pF @ 50 V

Product details

600 V MDmesh II N-channel in a TO-251 I-PAK

450 mOhm on-resistance and 31 nC gate charge

The 31 nC typical gate charge at 10 V means the gate driver doesn't need to supply a large current pulse, keeping switching losses manageable in a 100 kHz hard-switched topology. Input capacitance is 850 pF at 50 V drain-source, which is moderate for a 600 V device and helps keep the Miller plateau short.

STMicroelectronics lists the STD11NM60N-1 as obsolete. There is no official ST replacement listed in the lifecycle record, so any substitution must be validated against the original design's thermal and switching requirements.

Frequently asked questions

What is the replacement for STD11NM60N-1?

The lifecycle record does not list an official ST replacement for the STD11NM60N-1. Any alternative must be evaluated for pin-compatibility, Rds(on), gate charge, and thermal performance against the original design.