STD11N65M5

STMicroelectronics · MDmesh™ V Series

STMicroelectronics MDmesh V N-channel MOSFET, 650 V drain-source, 9 A continuous drain, 480 mOhm Rds(on) at 10 V, 17 nC gate charge, DPAK surface-mount package.

STMicroelectronics STD11N65M5
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD11N65M5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ V
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation85W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs480mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds620 pF @ 100 V

Technical details

650 V N-channel in a DPAK — primary-side switching workhorse

That works out to about 10 W conduction loss at full current — the 85 W power dissipation rating gives you headroom, but the DPAK's thermal path to the board copper matters. Input capacitance is 620 pF at 100 V drain-source, which keeps the switching losses in check for hard-switched topologies. The 5 V threshold at 250 µA means the gate drive needs to swing to 10 V to get the rated Rds(on) — 5 V logic won't fully enhance it.

No last-time-buy notice, no end-of-life risk on the immediate horizon. For new designs, this is a safe call — no need to qualify a substitute yet.

STD11N65M5
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