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STMicroelectronics STD11N60DM2 — Discrete Semiconductors

STD11N60DM2 N-Channel MOSFET, 650V, 10A, DPAK

MPNSTD11N60DM2
Active

STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, 650 V drain-source, 10 A continuous drain, 420 mOhm Rds(on) at 5 A, 10 V, TO-252-3 DPAK, -55°C to 150°C junction temperature.

$1.7300Ref. price · indicative, final on quote
STMicroelectronics STD11N60DM2 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD11N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs420mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs16.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds614 pF @ 100 V

Product details

650 V, 10 A N-channel — MDmesh DM2 switching MOSFET

The STD11N60DM2: Gate charge totals 16.5 nC at 10 V, which keeps the switching losses manageable in hard-switched topologies up to the 100 kHz range.

Junction temperature range and thermal budget

Maximum power dissipation is 110 W at the case, but the DPAK's thermal resistance to ambient (RthJA) will limit continuous dissipation to a fraction of that without a heatsink or copper-spreading area on the PCB.

ROHS3 compliant, so it fits lead-free assembly flows without exemption paperwork.

Frequently asked questions

Is the STD11N60DM2 RoHS compliant?

Yes, it is ROHS3 compliant, suitable for lead-free soldering processes without exemption.