500 V, 8 A N-channel MOSFET in DPAK — MDmesh II Plus series
The STMicroelectronics STD11N50M2 is an N-channel power MOSFET built on the MDmesh™ II Plus technology platform, designed for high-voltage switching applications.
Parametric highlights for switching power supply design
Combined with an input capacitance (Ciss) of 395 pF at 100 V drain-source, the device presents a light load to the gate driver, enabling faster turn-on and turn-off transitions. The 85 W maximum power dissipation at Tc provides a generous thermal budget when mounted on adequate copper area.
Package and mounting — DPAK (TO-252)
The DPAK (TO-252) surface-mount package has a 2-lead plus tab configuration (SC-63 variant). The exposed tab is the drain terminal and provides the primary thermal path to the PCB. When laying out the board, ensure the drain pad is connected to a sufficient copper area for heat spreading; the 85 W dissipation rating assumes a properly heatsunk case.
