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STMicroelectronics STD110NH02LT4 — Discrete Semiconductors

STMicroelectronics STD110NH02LT4

MPNSTD110NH02LT4
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD110NH02LT4 specifications
ParameterValue
SeriesSTripFET™ III
FET typeN-Channel
MountingSurface Mount
Drain to source voltage24 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4450 pF @ 15 V