STD110N8F6

STMicroelectronics · STripFET™ F6 Series

STMicroelectronics STripFET™ F6 STD110N8F6, N-Channel MOSFET, 80V Vdss, 80A Id, 6.5mOhm Rds(on) @ 40A/10V, 150nC Qg, DPAK (TO-252), -55 to 175°C.

STMicroelectronics STD110N8F6
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD110N8F6 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ F6
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation167W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9130 pF @ 40 V

Technical details

80 V, 6.5 mOhm — the conduction-loss floor for a 48 V bus

With 150 nC of gate charge at 10 V, a 1 A gate driver can switch this FET in roughly 150 ns — adequate for hard-switching converters in the 50–100 kHz range. The 9130 pF input capacitance at 40 V drain-source confirms the driver must source a brief but substantial current pulse at each switching edge.

ROHS3 compliant. The base product number STD110 covers the family; the N8F6 suffix identifies this specific 80 V, F6-generation variant in the DPAK package.

STD110N8F6
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