STMicroelectronics STripFET™ II series, P-Channel MOSFET, 60 V drain-source, 10 A continuous drain, 200 mOhm Rds(on) at 10 V, 21 nC gate charge, TO-251-3 I-Pak through-hole package.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | 175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 200mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 21 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 850 pF @ 25 V |
P-channel simplifies the gate drive in positive-rail switching — no charge pump needed when the source sits at the supply rail.
Input capacitance is 850 pF at 25 V drain-source.
Housed in a TO-251-3 (I-Pak) through-hole package with short leads, the part dissipates up to 40 W at case temperature. Junction temperature is rated to 175 °C, which gives headroom for high-ambient or constrained-airflow enclosures.
A replacement must match the P-channel polarity, 60 V drain-source rating, 10 A continuous drain current, and the TO-251 (I-Pak) through-hole package.