STD10P6F6

STMicroelectronics

STMicroelectronics DeepGATE™, STripFET™ VI series STD10P6F6, P-Channel MOSFET, 60 V Vdss, 10 A Id, 160 mOhm Rds(on) at 10 V, DPAK-3 surface-mount package.

STMicroelectronics STD10P6F6
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD10P6F6 specifications
Parameter / AttributeSpecification / Value
SeriesDeepGATE™, STripFET™ VI
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation35W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs6.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds340 pF @ 48 V

Technical details

P-Channel load switch with a 175°C junction rating

The junction temperature rating extends to 175°C, making this part suitable for high-ambient environments such as automotive under-hood, industrial motor drives, and power supply OR-ing stages where a P-Channel simplifies high-side switching.

160 mOhm on-resistance and 6.4 nC gate charge — switching loss budget

At 5 A, expect roughly 4 W dissipation before thermal derating. The gate charge of 6.4 nC at 10 V is low for a 10 A rated P-Channel, which keeps gate-drive losses modest in PWM applications like battery charge/discharge switches or load disconnects. Input capacitance is 340 pF at 48 V Vds, so the switching node capacitance is manageable for medium-frequency operation.

DPAK footprint and thermal path

The DPAK (TO-252) package has a single exposed tab on the top side; the tab is the drain. This part is surface-mount only, so the thermal design relies on board layout, not an external heatsink.

STD10P6F6
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