STMicroelectronics STripFET™ F6 series, P-Channel MOSFET, Drain to Source Voltage 100 V, Continuous Drain Current 10A (Tc) @ 25°C, Rds On (Max) 180mOhm @ 5A 10V, Gate Charge 16.5 nC @ 10 V, DPAK-3 (TO-252-3).
| Parameter | Value |
|---|---|
| Series | STripFET™ F6 |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 180mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 864 pF @ 80 V |
The 16.5 nC gate charge keeps switching losses manageable at moderate frequencies.
Housed in the DPAK (TO-252-3) surface-mount package, with the tab as the drain connection. The 40 W power dissipation rating assumes the tab is soldered to a decent copper island.
No end-of-life notification, no last-time-buy clock ticking.
Maximum on-resistance is 180 mOhm at 5 A drain current with 10 V gate drive.