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STMicroelectronics STD10NM60ND — Discrete Semiconductors

STD10NM60ND N-Channel MOSFET, 600 V, 8 A, DPAK

MPNSTD10NM60ND
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STMicroelectronics FDmesh™ II series, N-Channel MOSFET, 600 V drain-source, 8 A continuous drain at 25°C, 600 mOhm Rds(on) at 4 A, 10 V gate drive, 20 nC gate charge, DPAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.

$2.1600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD10NM60ND specifications
ParameterValue
SeriesFDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs600mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds577 pF @ 50 V

Product details

600 V FDmesh™ II N-channel — the offline power switcher

This series features ST's fast-recovery body diode technology, which reduces reverse-recovery charge and improves efficiency in bridge topologies like LLC resonant converters and active PFC stages.

Drive voltage for the rated Rds(on) is 10 V, with a max Vgs of ±25 V. The 5 V threshold maximum at 250 µA drain current gives a comfortable margin above logic-level gate signals.

DPAK footprint and thermal design

The DPAK (TO-252) package with two leads and a tab is a standard surface-mount footprint for medium-power MOSFETs.

Frequently asked questions

Is STD10NM60ND compatible with my existing TO-252 footprint?

Yes, the STD10NM60ND is in a standard TO-252 (DPAK) surface-mount package with two leads and a tab. It is footprint-compatible with any DPAK layout.

What is the closest pin-compatible alternative to STD10NM60ND?

The STD10NM60N is the earlier generation in the same DPAK package and 600 V class. The ND suffix denotes the FDmesh™ II fast-recovery diode variant, which improves efficiency in bridge topologies. Both are pin-compatible.