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STD10NM60ND

STMicroelectronics

STMicroelectronics FDmesh™ II series, N-Channel MOSFET, 600 V drain-source, 8 A continuous drain at 25°C, 600 mOhm Rds(on) at 4 A, 10 V gate drive, 20 nC gate charge, DPAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.

STMicroelectronics STD10NM60ND
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

STD10NM60ND specifications
Parameter / AttributeSpecification / Value
SeriesFDmesh™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs600mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds577 pF @ 50 V

Technical details

600 V FDmesh™ II N-channel — the offline power switcher

This series features ST's fast-recovery body diode technology, which reduces reverse-recovery charge and improves efficiency in bridge topologies like LLC resonant converters and active PFC stages.

Drive voltage for the rated Rds(on) is 10 V, with a max Vgs of ±25 V. The 5 V threshold maximum at 250 µA drain current gives a comfortable margin above logic-level gate signals.

DPAK footprint and thermal design

The DPAK (TO-252) package with two leads and a tab is a standard surface-mount footprint for medium-power MOSFETs.

STD10NM60ND
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