STMicroelectronics MDmesh™ II N-Channel MOSFET, STD10NM60N, 600V, 10A, 550mOhm, 19nC, DPAK-3 (TO-252), Tape & Reel.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 550mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 540 pF @ 50 V |
The STD10NM60N: Input capacitance is 540 pF at 50 V Vds, so the gate drive current needed for a 50 ns rise time at 10 V is about 0.1 A — a standard logic-level driver handles it without a pre-driver stage.
ROHS3 compliant per the manufacturer, with no restricted-substance exemptions that would complicate EU or global BOM acceptance.
The manufacturer confirms ROHS3 compliance for the STD10NM60N. Standard ST documentation includes the datasheet, material declaration, and REACH compliance information — available on request per lot.