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STMicroelectronics STD10NF10T4 — Discrete Semiconductors

STD10NF10T4 N-Channel MOSFET, 100V 13A DPAK

MPNSTD10NF10T4
Active

STMicroelectronics STD10NF10T4, STripFET™ II, N-Channel MOSFET, 100 V Vdss, 13 A Id, 130 mOhm Rds(on) at 5 A, 10 V, DPAK (TO-252) surface mount, -55°C to 175°C junction temperature.

$1.3700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD10NF10T4 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation50W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs130mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds460 pF @ 25 V

Product details

100 V, 13 A N-channel in DPAK — what this part is

The 21 nC typical gate charge and 460 pF input capacitance place it in the mid-speed class — fast enough for a 50–200 kHz hard-switched converter without demanding a high-current gate driver.

130 mOhm on-resistance — sizing the conduction loss

The 130 mOhm maximum Rds(on) is specified at 5 A drain current with a 10 V gate-source voltage. At 13 A full load, conduction loss calculates to about 22 W at the rated current — which means the 50 W package dissipation limit at case temperature is the real constraint, not the silicon. For a 3 A load in a 48 V telecom brick, the conduction loss drops to about 1.2 W, which the DPAK handles with a reasonable copper area on the drain tab.

DPAK package — thermal and assembly notes

The STD10NF10T4 comes in the DPAK (TO-252-3) surface-mount package with two leads and a tab. For continuous operation above 5 A, a 1-inch-square copper pour on the top layer with via stitching to an inner-layer plane is typical. The DPAK footprint is shared across many 100 V N-channel parts, so a second-source layout is straightforward.

Frequently asked questions

What is the equivalent or replacement for STD10NF10T4?

The base product number is STD10, indicating a family of 100 V N-channel MOSFETs in DPAK with varying Rds(on) and current ratings. For a direct functional equivalent, look for other 100 V, 13 A N-channel MOSFETs in DPAK with similar gate charge and Rds(on) — the STripFET™ II series itself offers multiple Rds(on) grades.