STMicroelectronics MDmesh™ II Plus, N-Channel MOSFET, 600 V Vdss, 7.5 A Id, 600 mOhm Rds(on), DPAK package, -55 to 150°C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7.5A (Tc) |
| Power dissipation | 85W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 400 pF @ 100 V |
The STD10N60M2: Gate charge is 13.5 nC at 10 V.
The 85 W maximum power dissipation at case temperature assumes the tab is connected to a sufficient board area — typical 2 oz copper pour of at least 600 mm² keeps the junction within the -55 to 150°C operating range.
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