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STMicroelectronics STD10N60DM2 — Discrete Semiconductors

STD10N60DM2 N-Channel MOSFET, 650 V, 8 A, DPAK

MPNSTD10N60DM2
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STMicroelectronics MDmesh™ DM2 series N-Channel MOSFET, STD10N60DM2, 650 V drain-source, 8 A continuous drain, 530 mΩ Rds(on) at 10 V, DPAK surface-mount package.

$1.5200Ref. price · indicative, final on quote
STMicroelectronics STD10N60DM2 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD10N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation109W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs530mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds529 pF @ 100 V

Product details

650 V N-channel MOSFET in DPAK — design-fit summary

That makes the STD10N60DM2 a candidate for higher-frequency hard-switching topologies where switching losses dominate. The input capacitance is 529 pF at 100 V drain-source, consistent with the low-Qg design. Drive voltage for rated Rds(on) is 10 V, with a maximum gate-source voltage of ±25 V.

Operating temperature range and reliability

The MDmesh DM2 process delivers avalanche ruggedness typical of the series, though the standard datasheet should be consulted for single-pulse and repetitive avalanche ratings. The device is RoHS compliant per ST's standard policy.

Frequently asked questions

Where can I buy STD10N60DM2?

The STD10N60DM2 is available to order through independent distribution. Submit an RFQ to receive a firm quote with current availability and pricing.

What is the Vds rating of STD10N60DM2?

The drain-to-source voltage rating is 650 V.