STMicroelectronics MDmesh™ K5 series, N-Channel MOSFET, 800 V drain-source, 8 A continuous drain at 25°C, 630 mOhm max Rds(on) at 4 A, 10 V drive, 15 nC gate charge, DPAK (TO-252) surface mount, -55 to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 8A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 630mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 427 pF @ 100 V |
The STD10LN80K5: The DPAK (TO-252) surface-mount package uses the standard TO-252 footprint. The 800 V drain-source rating is the breakdown voltage.
The DPAK (TO-252) package is a common surface-mount outline with a tab for thermal dissipation.
The maximum Rds(on) is 630 mOhm at 4 A drain current with 10 V gate drive. That is the datasheet max at 25°C junction — the typical value is lower, but always design to the max for thermal margin.