STMicroelectronics STripFET F7 STD105N10F7AG, N-Channel MOSFET, 100V Vdss, 80A Id, 8mOhm Rds(on) at 10V, DPAK, -55 to 175°C, AEC-Q101.
| Parameter | Value |
|---|---|
| Series | STripFET™ F7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 120W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 8mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 61 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4369 pF @ 50 V |
Total gate charge is 61 nC at 10 V — the driver must supply 6.1 mA average current per MHz of switching frequency. Input capacitance Ciss is 4369 pF at 50 V drain bias, which sets the Miller plateau duration and the crossover switching loss.
Housed in the DPAK (TO-252-3) surface-mount package with an exposed drain tab.
Product status is active. ROHS3 compliant.
Yes, the STD105N10F7AG carries AEC-Q101 qualification, making it suitable for automotive-grade applications requiring PPAP submission and traceability to the semiconductor wafer fab and assembly site.
Maximum on-resistance is 8 mOhm at 40 A drain current with 10 V gate drive. This is the conduction loss figure used for thermal design at the nominal operating point.
Yes, the part is ROHS3 compliant per the manufacturer's declaration.