STD100N3LF3

STMicroelectronics · STripFET™ II Series

STMicroelectronics STripFET™ II STD100N3LF3, N-Channel MOSFET, 30V Vdss, 80A Id, 5.5mOhm Rds(on) at 40A/10V, DPAK (TO-252), -55°C~175°C.

STMicroelectronics STD100N3LF3
[IN STOCK] In Stock: 12 pcs
$3.71/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD100N3LF3 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs5.5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds2060 pF @ 25 V

Technical details

Switching and thermal budget

Gate charge is 27 nC max at 5 V, which means a typical gate driver can turn this FET on and off at tens of kHz without excessive drive current — a 100 kHz switcher would need about 2.7 mA average drive, well within a standard driver's capability. Input capacitance is 2060 pF at 25 V drain-source, so the Miller plateau is manageable. The DPAK package is rated for 110 W dissipation at case temperature, but in a real board the copper pad area under the tab sets the junction-to-ambient thermal resistance — treat the 110 W as a case-temperature-limited ceiling, not a free-air number.

If you need a production-grade alternative with the same footprint and similar ratings, the next FAQ covers what to look for.

STD100N3LF3
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