STD100N10F7

STMicroelectronics · DeepGATE™, STripFET™ VII Series

STMicroelectronics DeepGATE, STripFET VII series, N-Channel MOSFET, 100V Vdss, 80A Id, 8mOhm Rds(on) at 40A 10V, 61nC Qg, DPAK package, -55 to 175°C.

STMicroelectronics STD100N10F7
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STD100N10F7 specifications
Parameter / AttributeSpecification / Value
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation120W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs61 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4369 pF @ 50 V

Technical details

The STD100N10F7: Total gate charge is 61 nC at 10 V, with input capacitance 4369 pF at 50 V drain bias.

Thermal range and package reality

Junction temperature range is -55 to 175 °C, exceeding the typical automotive grade AEC-Q101 requirement of 175 °C max. Without that copper spread, the junction derates rapidly above 100 °C ambient.

The base product number STD100 covers multiple Rds(on) and current variants in the same STripFET VII family; the F7 suffix identifies this specific 8 mOhm / 80 A bin.

STD100N10F7
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