What this STripFET N-channel MOSFET delivers
Housed in a surface-mount DPAK (TO-252) package, it suits automated assembly for medium-power boards.
The 30 V drain-source voltage rating sets the maximum rail this MOSFET can block; typical applications include 12 V and 24 V DC buses with headroom for transients. Gate charge of 27 nC at 5 V means the driver needs modest energy per switching cycle — suitable for PWM frequencies in the tens of kilohertz without excessive gate-drive losses. Input capacitance of 2060 pF at 25 V drain-source influences switching speed; a gate resistor may be needed to control ringing. The drive voltage range of 5 V to 10 V allows logic-level gate drive at 5 V, though the lowest Rds(on) is achieved at 10 V.
For existing BOM lines, procurement must rely on the surplus and broker channel to source remaining inventory.
