STB80NF10T4

STMicroelectronics · STripFET™ II Series

STMicroelectronics STripFET™ II, STB80NF10T4, N-Channel MOSFET, 100 V Vdss, 80 A Id, 15 mOhm Rds(on) at 40 A, 10 V, D2PAK (TO-263), -55 to 175 °C.

STMicroelectronics STB80NF10T4
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STB80NF10T4 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs182 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5500 pF @ 25 V

Technical details

100 V, 80 A N-channel — the thermal budget sets the real current

The 15 mOhm on-resistance at 40 A, 10 V drive defines the conduction loss floor — at 80 A the I²R loss is 96 W before you add switching losses, so the 300 W power dissipation ceiling is real headroom only with a substantial heatsink and forced airflow.

Gate charge and drive current — what 182 nC means for the gate driver

Total gate charge is 182 nC at 10 V. At 100 kHz switching frequency the average gate drive current is 182 nC × 100 kHz = 18.2 mA, well within a standard gate driver's capability. The input capacitance of 5500 pF at 25 V drain-source sets the Miller plateau slope — a driver with at least 2 A peak source/sink keeps the switching edges clean and avoids partial turn-on during the Miller region.

175 °C junction — rated for the hot end of the motor drive

The D2PAK (TO-263) surface-mount package lets the exposed tab solder directly to a copper island on the PCB — the thermal resistance to ambient depends on that copper area, not the package itself.

STB80NF10T4
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