STB55NF06LT4

STMicroelectronics · STripFET™ II Series

MOSFET N-CH 60V 55A D2PAK

STMicroelectronics STB55NF06LT4
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STB55NF06LT4 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V, 5V
Current - continuous drain (Id) @ 25°C55A (Tc)
Power dissipation95W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4.7V @ 250µA
Rds on (Max) @ id, vgs18mOhm @ 27.5A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 25 V
STB55NF06LT4
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