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STMicroelectronics STB22N60M6
STMicroelectronics

STB22N60M6 MOSFET N-CH 600V 15A D2PAK, 230mOhm Rds(on)

MPNSTB22N60M6
End of Life

STMicroelectronics MDmesh™ M6, N-Channel MOSFET, 600 V, 15 A, 230 mOhm @ 7.5 A, 10 V, 20 nC @ 10 V, D²PAK (TO-263), -55°C to 150°C.

$2.99Ref. price · indicative, final on quote
STB22N60M6 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STB22N60M6 Technical Specifications
ParameterValue
SeriesMDmesh™ M6
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation130W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs230mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 100 V

Product details

600 V, 15 A — MDmesh M6 in a D2PAK

The STB22N60M6: It comes in a surface-mount D²PAK (TO-263) package, which provides a low-inductance path for the drain tab and a solderable thermal pad for heatsinking through the PCB.

230 mOhm Rds(on) and 20 nC gate charge

Maximum on-resistance is 230 mOhm at 7.5 A drain current with 10 V gate drive — this sets the conduction loss floor for a 15 A design and directly influences heatsink sizing. Total gate charge is 20 nC at 10 V, a low figure for a 600 V device that keeps the switching transition fast and reduces cross-conduction losses in hard-switched topologies. Input capacitance is 800 pF at 100 V drain-source.

Frequently asked questions

What is the Rds(on) and gate charge of STB22N60M6?

Maximum Rds(on) is 230 mOhm at 7.5 A with 10 V gate drive.