STB20NM50T4

STMicroelectronics · MDmesh™ Series

STMicroelectronics MDmesh™ series, STB20NM50T4, N-Channel MOSFET, 550 Vdss, 20 A continuous drain, 250 mOhm Rds(on) at 10 V, 56 nC gate charge, D²Pak (TO-263) surface-mount package.

STMicroelectronics STB20NM50T4
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[IN STOCK] In Stock: 9 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STB20NM50T4 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage550 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation192W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs250mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1480 pF @ 25 V

Technical details

Gate drive and switching — the 56 nC number matters more than the Rds(on) in hard-switched designs

At 10 V gate drive the 56 nC gate charge is modest for a 550 V / 20 A device — it keeps the driver stage simple and the switching losses predictable in a 100 kHz PFC or flyback. The 1480 pF input capacitance at 25 V drain bias is a sanity check for the driver's peak current capability; a 1 A driver charges it in roughly 1.5 µs. The ±30 V maximum gate rating gives headroom for ringing on the gate node without an external clamp zener in most layouts.

It is ROHS3 compliant.

STB20NM50T4
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