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STMicroelectronics STB20NM50T4

STB20NM50T4 N-Channel MOSFET, 550 V, 20 A, MDmesh™

MPNSTB20NM50T4
End of Life

STMicroelectronics MDmesh™ series, STB20NM50T4, N-Channel MOSFET, 550 Vdss, 20 A continuous drain, 250 mOhm Rds(on) at 10 V, 56 nC gate charge, D²Pak (TO-263) surface-mount package.

$5.71Ref. price · indicative, final on quote
STMicroelectronics STB20NM50T4 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB20NM50T4 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage550 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation192W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs250mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1480 pF @ 25 V

Product details

Gate drive and switching — the 56 nC number matters more than the Rds(on) in hard-switched designs

At 10 V gate drive the 56 nC gate charge is modest for a 550 V / 20 A device — it keeps the driver stage simple and the switching losses predictable in a 100 kHz PFC or flyback. The 1480 pF input capacitance at 25 V drain bias is a sanity check for the driver's peak current capability; a 1 A driver charges it in roughly 1.5 µs. The ±30 V maximum gate rating gives headroom for ringing on the gate node without an external clamp zener in most layouts.

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of STB20NM50T4?

The maximum on-resistance is 250 mOhm at 10 A drain current with 10 V gate drive. This is the conduction loss figure to use for thermal calculations at the rated operating point.