Rds(on) is 3.6 mOhm at 60 A with a 10 V gate drive.
Gate drive and switching behaviour
Gate threshold voltage maxes out at 4 V at 250 µA. Gate charge is 140 nC at 10 V.
Junction temperature range is -55 °C to 175 °C. Power dissipation is 300 W.
STB200NF03T4
STMicroelectronics · STripFET™ III Series
STMicroelectronics STripFET™ III, N-Channel MOSFET, 30V Vdss, 120A Id, 3.6mOhm Rds(on) @ 60A 10V, 140nC Qg, D2PAK-3, -55°C to 175°C.
[IN STOCK] In Stock: 22 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ III |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3.6mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 140 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4950 pF @ 25 V |
Technical details
STB200NF03T4
[ALLOC] verified