Rds(on) is 3.6 mOhm at 60 A with a 10 V gate drive.
Gate drive and switching behaviour
Gate threshold voltage maxes out at 4 V at 250 µA. Gate charge is 140 nC at 10 V.
Junction temperature range is -55 °C to 175 °C. Power dissipation is 300 W.
STB200NF03T4 N-Channel MOSFET, 30V 120A D2PAK
MPNSTB200NF03T4
End of Life
STMicroelectronics STripFET™ III, N-Channel MOSFET, 30V Vdss, 120A Id, 3.6mOhm Rds(on) @ 60A 10V, 140nC Qg, D2PAK-3, -55°C to 175°C.
$3.55Ref. price · indicative, final on quote
PackagingTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesSTripFET™ III
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | STripFET™ III |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3.6mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 140 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4950 pF @ 25 V |
Product details
Frequently asked questions
Can STB200NF03T4 be used for motor control?
Yes, its 30 V Vdss, 120 A continuous drain current, and 3.6 mOhm Rds(on) make it suitable for DC motor drives and low-voltage brushless DC motor controllers operating from 12 V or 24 V rails. The 140 nC gate charge means you will need a gate driver capable of sourcing that charge for the switching frequency you target.
What is the replacement for STB200NF03T4 if it becomes obsolete?
No official replacement order code has been published by STMicroelectronics. Since the part is currently Active, no replacement is needed now. For a future second-source option, look for a 30 V, 120 A N-channel MOSFET in D2PAK with Rds(on) near 3.6 mOhm and similar gate charge.