That 165 mOhm is the conduction-loss baseline at 25°C junction — expect it to roughly double at 150°C junction, so the thermal loop in the layout needs to keep the die below 125°C to hold the Rds(on) under 300 mOhm in continuous operation. Total gate charge is 29.5 nC at 10 V, with an input capacitance of 1000 pF at 25 V drain. A 29.5 nC gate charge means a 10 V gate driver delivering 1 A can switch the FET in about 30 ns — fast enough for a 100 kHz hard-switching converter, but the Miller plateau will stretch the turn-off if the gate-drive loop inductance isn't kept under 10 nH.
Package and thermal budget
Housed in a D²PAK (TO-263) surface-mount package with a single drain tab. The 110 W power dissipation at case temperature is the absolute ceiling — in a real board with 1 oz copper and minimal heatsinking, derate to about 40 W continuous before the junction hits 175°C.