STB140NF55T4

STMicroelectronics · STripFET™ II Series

STMicroelectronics STripFET™ II, N-Channel MOSFET, 55 V Vdss, 80 A continuous drain, 8 mOhm Rds(on) at 10 V, D2PAK (TO-263), -55 to 175 °C junction temperature.

STMicroelectronics STB140NF55T4
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STB140NF55T4 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs142 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5300 pF @ 25 V

Technical details

Its 8 mOhm max on-resistance at 40 A and 10 V gate drive suits a 55 V bus. The 142 nC gate charge at 10 V requires a driver capable of sourcing a solid current pulse. Rated for 80 A continuous drain at 25 °C case temperature, derate at higher ambient. The D2PAK (TO-263) footprint fits standard surface-mount assembly.

Junction temperature spans -55 to 175 °C, which covers under-hood automotive, industrial motor drives with hot enclosures, and outdoor telecom cabinets. The wide range also means the part can handle brief overload events without immediate failure — useful for inrush or short-circuit withstand in a breaker-less design. No AEC-Q101 qualification is listed in the record, so verify with ST if automotive-grade certification is required for your program.

STB140NF55T4 carries an Active product status, so it remains in normal production with no last-time-buy risk. ROHS3 compliant — no exemptions expiring.

STB140NF55T4
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