Skip to main content
STMicroelectronics STB12NK80ZT4

STB12NK80ZT4 MOSFET N-Ch 800V 10.5A D2PAK SuperMESH

MPNSTB12NK80ZT4
End of Life

STMicroelectronics SuperMESH™ STB12NK80ZT4, N-Channel MOSFET, 800 V Vdss, 10.5 A Id, 750 mOhm Rds(on) at 10 V, 87 nC Qg, D2PAK surface mount, -55 to 150 °C.

$4.93Ref. price · indicative, final on quote
PackagingTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STB12NK80ZT4 Technical Specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10.5A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs750mOhm @ 5.25A, 10V
Gate charge (Qg) (Max) @ vgs87 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2620 pF @ 25 V

Product details

800 V N-channel — what it handles and where it fits

That 800 V ceiling puts it squarely in offline flyback converters, PFC stages, and 2-switch forward topologies where the primary-side switch sees the full rectified DC bus plus reflected voltage.

Gate drive and switching — what the numbers mean

Gate charge totals 87 nC at 10 V, which is moderate for an 800 V part. A typical gate driver delivering 1 A peak can switch this FET in under 100 ns, but the 2620 pF input capacitance at 25 V drain bias means the driver sees a capacitive load that slows the edges if the gate loop is not tight. The recommended drive voltage is 10 V to achieve the rated Rds(on); driving it from a 12 V rail is fine, but stay within the ±30 V Vgs max. The 4.5 V threshold at 100 µA is a typical logic-level threshold for a standard MOSFET — not a sub-1 V logic-level part, so a 5 V gate signal from a microcontroller will not fully enhance it.

Thermal budget and derating

Maximum power dissipation is 190 W at case temperature, but that is the theoretical limit with an ideal heatsink. In a real D2PAK layout on a 2-layer board with 1 oz copper, the effective dissipation is much lower — expect to derate to around 50-60 W continuous with a heatsink on the tab. The junction temperature range is -55 to 150 °C, so the part can live in hot environments like a sealed power supply or an outdoor telecom rectifier. If the ambient is 85 °C, the 10.5 A rating at 25 °C must be derated per the datasheet curve — the actual continuous current at 100 °C case temperature is roughly 7 A, not the full 10.5 A.

Package and mounting — D2PAK realities

The STB12NK80ZT4 comes in a TO-263-3 (D2PAK) surface-mount package with the tab as the drain connection. The exposed metal tab needs a good thermal and electrical connection to the PCB copper pour — a minimum of 600 mm² of 2 oz copper on the top layer is typical for dissipating 30-40 W. The part is also available in Cut Tape (CT) and Tape & Reel (TR) options, which affects how it is fed into a pick-and-place line. For a rework tech: the D2PAK tab is large enough that a standard hot-air station with a 10 mm nozzle can remove it, but the board needs preheating to 100-120 °C to avoid lifting the pad.

Frequently asked questions

How can I order STB12NK80ZT4 or check its availability?

STB12NK80ZT4 is an active-production part. Submit an RFQ through this listing; we source it to order and confirm current pricing and availability at quote time. No stock-holding claim — availability is confirmed per request.

What is the maximum drain current of STB12NK80ZT4 at 100°C?

The datasheet specifies 10.5 A continuous at 25°C case temperature. At 100°C case temperature, the current must be derated — typically to around 7 A, depending on the thermal design. The exact derating curve is in the datasheet.

What is the recommended gate drive voltage for STB12NK80ZT4?

The recommended gate drive voltage to achieve the rated 750 mOhm Rds(on) is 10 V. The gate threshold is 4.5 V max at 100 µA, so a 5 V logic signal will not fully enhance the FET. Stay within the ±30 V Vgs absolute maximum rating.