STB11NK50ZT4

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ STB11NK50ZT4, N-Channel MOSFET, 500 V Vdss, 10 A continuous drain, 520 mOhm Rds(on) at 10 V gate drive, 68 nC gate charge, D2PAK (TO-263) surface-mount package.

STMicroelectronics STB11NK50ZT4
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[IN STOCK] In Stock: 7 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STB11NK50ZT4 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs520mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1390 pF @ 25 V

Technical details

500 V N-channel in D2PAK — switching supply workhorse

It comes in the D2PAK (TO-263) surface-mount package, which is a common footprint for off-line power supplies, AC-DC converters, and motor-drive auxiliary supplies where the 500 V blocking voltage handles rectified mains with margin.

This is the figure to budget for conduction loss in the steady-state — at 4.5 A the I²R loss is about 10.5 W, which must be within the 125 W power dissipation limit and the thermal capability of the board copper and heatsinking. Gate charge totals 68 nC at 10 V. The input capacitance is 1390 pF at 25 V drain-source — this sets the switching energy per cycle and influences the driver's peak current requirement. The gate threshold voltage is specified at 4.5 V maximum with 100 µA drain current.

It is ROHS3 compliant.

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