The STMicroelectronics SCTWA30N120 is a 1200 V N-channel silicon-carbide power MOSFET in a TO-247-3 through-hole package. It is designed for high-efficiency switching in applications such as solar inverters, EV charging, and industrial power supplies where the 1200 V drain-source rating gives headroom on a 600–800 V DC bus. The 100 mOhm on-resistance at 20 A and 20 V gate drive sets the conduction loss floor — at 20 A the dissipation is 40 W, which the 270 W package power rating can handle with adequate heatsinking. Gate charge of 105 nC at 20 V is moderate for a 1200 V SiC part; a gate driver delivering 2 A peak can switch it in under 100 ns, keeping switching losses manageable at frequencies up to 100 kHz.
Junction temperature range and package — design-in checklist
The -55°C to 200°C junction temperature range qualifies the SCTWA30N120 for high-reliability environments — avionics, downhole drilling, and outdoor telecom where the ambient can exceed 85°C and the junction sees repetitive thermal cycling. Input capacitance is 1700 pF at 400 V drain-source — this is the Ciss the driver sees; the low value relative to the current rating means the driver's peak current requirement stays moderate, but the gate loop inductance must be kept under 10 nH to avoid ringing.