SCTWA20N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
[IN STOCK] In Stock: 5 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 20V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 175W (Tc) |
| Operating temperature | -55°C ~ 200°C (TJ) |
| Package | Tube |
| Vgs | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.5V @ 1mA (Typ) |
| Rds on (Max) @ id, vgs | 239mOhm @ 10A, 20V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 20 V |
| Input capacitance (Ciss) (Max) @ vds | 650 pF @ 400 V |
SCTWA20N120
[ALLOC] verified