1200V SiC MOSFET in TO-247-3
The SCT50N120: It comes in a through-hole TO-247-3 package, shipped in tube format. With a maximum Rds(on) of 69 mOhm at 40 A and 20 V gate drive, and a total gate charge of 122 nC at 20 V, this part is built for high-efficiency switching in hard-switching topologies like boost converters, LLC resonant converters, and three-phase inverter stages. The wide operating junction temperature range from -55°C to 200°C suits it for demanding environments such as EV traction inverters, solar string inverters, and industrial motor drives where silicon carbide's lower switching losses and higher temperature capability matter.
Parametric deep-dive
Gate threshold voltage is 3 V maximum at 1 mA drain current, and the recommended drive voltage for minimum on-resistance is 20 V. Input capacitance (Ciss) is 1900 pF typical at 400 V drain-source, which together with the 122 nC gate charge defines the switching speed and driver requirements. Maximum power dissipation is 318 W at case temperature, and the device is rated for a gate-source voltage range of +25 V to -10 V, giving good margin against gate overvoltage transients in half-bridge configurations.