SICFET N-CH 1200V 65A HIP247
$40.1Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
- 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
- Date & lot codes on quoteStated per line before you commit; label photos on request.
- MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
- PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 20V |
| Current - continuous drain (Id) @ 25°C | 65A (Tc) |
| Power dissipation | 318W (Tc) |
| Operating temperature | -55°C ~ 200°C (TJ) |
| Package | Tube |
| Vgs | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3V @ 1mA |
| Rds on (Max) @ id, vgs | 69mOhm @ 40A, 20V |
| Gate charge (Qg) (Max) @ vgs | 122 nC @ 20 V |
| Input capacitance (Ciss) (Max) @ vds | 1900 pF @ 400 V |