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STMicroelectronics M24C08-RDW6TP — Memory (DRAM / SRAM / Flash / EEPROM)

STMicroelectronics M24C08-RDW6TP 8Kbit I²C EEPROM, 400 kHz

MPNM24C08-RDW6TP
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STMicroelectronics M24C08-RDW6TP, 8Kbit serial EEPROM, I²C interface, 400 kHz clock, 1.8V–5.5V supply, 900 ns access time, 8-TSSOP, -40°C to 85°C.

$0.2200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

M24C08-RDW6TP specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage1.8V ~ 5.5V
Clock frequency400 kHz
Memory interfaceI²C
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyEEPROM
Access time900 ns
Memory size8Kbit
Memory formatEEPROM
Case8-TSSOP (0.173\", 4.40mm Width)
Memory organization1K x 8
Write cycle time - word, page5ms

Product details

8 Kbit I²C EEPROM for parameter storage

The STMicroelectronics M24C08-RDW6TP is an 8Kbit serial EEPROM organized as 1K x 8 bits, accessed over an I²C bus at up to 400 kHz. It stores configuration data, calibration constants, and device identity in designs where non-volatile memory is needed without battery backup. The 900 ns access time is the random-read cycle — sequential reads run at the bus clock rate, so throughput depends on the master's addressing overhead.

Write cycle and endurance context

Page and word writes complete in 5 ms typical. For a 1K x 8 array, that means a full-memory rewrite takes roughly 40 ms if the master pages efficiently. The EEPROM technology supports 1 million write cycles per byte — adequate for calibration updates and event logs, not for high-frequency data logging.

Frequently asked questions

What is the memory size of M24C08-RDW6TP?

The M24C08-RDW6TP has an 8Kbit memory organized as 1K x 8 bits.