L6498DTR

STMicroelectronics

STMicroelectronics L6498DTR, high-side or low-side gate driver for IGBT and N-channel MOSFET, 2A source / 2.5A sink peak output, 500V bootstrap, 25ns rise/fall, 8-SOIC package, -40 to 125°C.

STMicroelectronics L6498DTR
[IN STOCK] In Stock: 102 pcs
$1.82/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

L6498DTR specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel MOSFET
Input typeCMOS/TTL
Channel typeIndependent
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH1.45V, 2V
High side voltage - max (Bootstrap)500 V
Current - peak output (Source, sink)2A, 2.5A
Operating temperature-40°C ~ 125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHigh-Side or Low-Side
Rise (Fall time)25ns, 25ns

Technical details

The STMicroelectronics L6498DTR is a high-side or low-side gate driver for IGBTs and N-channel MOSFETs. Peak output is 2 A source and 2.5 A sink. The 500 V maximum bootstrap voltage sets the high-side rail ceiling. Matched 25 ns rise and fall times simplify dead-time programming. Supply range is 10 V to 20 V. Input thresholds are CMOS/TTL-compatible with VIL of 1.45 V and VIH of 2 V.

Temperature grade and package — industrial and automotive environments

Surface-mount assembly is the norm for reflow-soldered power stages. The two driver channels are independent, so the part can also be used as a dual low-side driver if the bootstrap diode is not needed.

Sourcing and lifecycle — active, ROHS3, no LTB risk

L6498DTR
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