Skip to main content
Log in
STMicroelectronics L6498DTR — Discrete Semiconductors

STMicroelectronics L6498DTR Gate Driver, 2A/2.5A 8-SOIC

MPNL6498DTR
End of Life

STMicroelectronics L6498DTR, high-side or low-side gate driver for IGBT and N-channel MOSFET, 2A source / 2.5A sink peak output, 500V bootstrap, 25ns rise/fall, 8-SOIC package, -40 to 125°C.

$2.55Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

L6498DTR specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeCMOS/TTL
Channel typeIndependent
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH1.45V, 2V
High side voltage - max (Bootstrap)500 V
Current - peak output (Source, sink)2A, 2.5A
Operating temperature-40°C ~ 125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHigh-Side or Low-Side
Rise (Fall time)25ns, 25ns

Product details

The STMicroelectronics L6498DTR is a high-side or low-side gate driver for IGBTs and N-channel MOSFETs. Peak output is 2 A source and 2.5 A sink. The 500 V maximum bootstrap voltage sets the high-side rail ceiling. Matched 25 ns rise and fall times simplify dead-time programming. Supply range is 10 V to 20 V. Input thresholds are CMOS/TTL-compatible with VIL of 1.45 V and VIH of 2 V.

Temperature grade and package — industrial and automotive environments

Surface-mount assembly is the norm for reflow-soldered power stages. The two driver channels are independent, so the part can also be used as a dual low-side driver if the bootstrap diode is not needed.

Sourcing and lifecycle — active, ROHS3, no LTB risk

Frequently asked questions

What is the L6498DTR's listed gate type?

The L6498DTR is specified to drive IGBTs and N-channel MOSFETs. The CMOS/TTL-compatible input accepts logic-level signals from a microcontroller or DSP.

Is L6498DTR compatible with IGBT drivers?

Yes. The gate type is explicitly IGBT and N-Channel MOSFET, and the 2 A source / 2.5 A sink peak output is sufficient to drive the gate capacitance of typical IGBT modules in the 600 V class.