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STMicroelectronics L6491DTR — Power Management (PMIC / Gate Driver)

STMicroelectronics L6491DTR Half-Bridge Gate Driver

MPNL6491DTR
End of Life

STMicroelectronics L6491DTR, Half-Bridge Gate Driver IC, IGBT/N-Channel MOSFET, Non-Inverting Input, Independent Channels, 4A Peak Output, 600V Bootstrap, 10V-20V Supply, 15ns Rise/Fall, -40°C to 125°C, 14-SOIC Package, Tape & Reel.

$2.71Ref. price · indicative, final on quote
Packaging14-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

L6491DTR specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Voltage10V ~ 20V
Logic voltage - VIL, VIH1.45V, 2V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)4A, 4A
Operating temperature-40°C ~ 125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case14-SOIC (0.154\", 3.90mm Width)
Driven configurationHalf-Bridge
Rise (Fall time)15ns, 15ns

Product details

Half-bridge gate driver with 4A drive and 600V bootstrap

The STMicroelectronics L6491DTR is a half-bridge gate driver IC for IGBTs and N-channel MOSFETs. It delivers 4A peak source and 4A peak sink current, with a bootstrap supply rated to 600 V maximum. Supply range spans 10 V to 20 V, and logic input thresholds sit at 1.45 V (VIL) and 2 V (VIH).

For current-production BOMs this means no supply-risk flag; for new designs it is a safe selection without an imminent obsolescence clock.

Bootstrap capability and application fit

Yes, the L6491DTR has a bootstrap capability — the high-side driver uses an external bootstrap diode and capacitor to generate the floating supply, with a maximum high-side voltage of 600 V. This is the standard architecture for half-bridge gate drivers in motor-drive inverters, UPS systems, and switched-mode power supplies where the DC bus sits below 600 V. The independent channel architecture means the low-side and high-side outputs operate with separate timing control, which simplifies dead-time insertion in firmware or via external logic.

Frequently asked questions

Does L6491DTR have a bootstrap capability?

Yes, the high-side driver uses an external bootstrap diode and capacitor to generate the floating supply rail, supporting a maximum high-side voltage of 600 V.

What is the closest pin-compatible alternative to L6491DTR?

Within the same ST family, the L6491D is the standard-tube variant of the same die in the same 14-SOIC package — the L6491DTR is simply the tape-and-reel version. For a parametric alternative, parts with higher or lower peak current ratings (e.g., 2 A or 9 A siblings in the L649x series) share the same footprint but differ in drive strength and may require bootstrap component adjustments.

What is the L6491DTR gate type?

The L6491DTR is specified for IGBT and N-channel MOSFET gates. The non-inverting input and independent channel architecture make it suitable for driving both device types in half-bridge configurations.