Half-bridge gate driver with 4A drive and 600V bootstrap
The STMicroelectronics L6491DTR is a half-bridge gate driver IC for IGBTs and N-channel MOSFETs. It delivers 4A peak source and 4A peak sink current, with a bootstrap supply rated to 600 V maximum. The 15 ns typical rise and fall times are matched. Supply range spans 10 V to 20 V, and logic input thresholds sit at 1.45 V (VIL) and 2 V (VIH).
Temperature grade and deployment environment
Rated for junction temperature from -40°C to 125°C, this driver suits industrial motor drives and outdoor power-factor-correction stages. The 14-SO package (3.90 mm body width) keeps a small footprint on the PCB.
Lifecycle and sourcing posture
The L6491DTR carries an active lifecycle status with ROHS3 compliance. For current-production BOMs this means no supply-risk flag; for new designs it is a safe selection without an imminent obsolescence clock.
Bootstrap capability and application fit
Yes, the L6491DTR has a bootstrap capability — the high-side driver uses an external bootstrap diode and capacitor to generate the floating supply, with a maximum high-side voltage of 600 V. This is the standard architecture for half-bridge gate drivers in motor-drive inverters, UPS systems, and switched-mode power supplies where the DC bus sits below 600 V. The independent channel architecture means the low-side and high-side outputs operate with separate timing control, which simplifies dead-time insertion in firmware or via external logic.