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STMicroelectronics L6386ED013TR — Analog & Data Acquisition

STMicroelectronics L6386ED013TR Gate Driver, Half-Bridge

MPNL6386ED013TR
End of Life

STMicroelectronics L6386ED013TR, half-bridge gate driver, 600V bootstrap, 400mA source / 650mA sink peak output, 50ns rise / 30ns fall, 17V max supply, -40°C to 150°C, 14-SOIC package.

$1.9Ref. price · indicative, final on quote
Packaging14-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

L6386ED013TR Technical Specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeInverting
Channel typeIndependent
Mounting typeSurface Mount
Voltage17V (Max)
Logic voltage - VIL, VIH1.5V, 3.6V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)400mA, 650mA
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case14-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)50ns, 30ns

Product details

Half-bridge gate driver for IGBT and N-channel MOSFET stages

The STMicroelectronics L6386ED013TR is a half-bridge gate driver designed to drive IGBT and N-channel MOSFET power switches in high-voltage applications. It integrates two independent driver channels with inverting input logic, supporting bootstrap operation for the high-side gate up to 600 V. The driver delivers 400 mA source and 650 mA sink peak output current, with typical rise and fall times of 50 ns and 30 ns respectively, providing controlled switching for motor drives, power inverters, and switched-mode power supplies. The logic input thresholds of 1.5 V (VIL) and 3.6 V (VIH) allow direct interface with 3.3 V or 5 V PWM controllers and microcontrollers. Operating over a -40°C to 150°C junction temperature range, it suits industrial and automotive environments where thermal cycling is a concern.

600 V bootstrap and supply rail considerations

The 600 V maximum bootstrap voltage on the high side sets the DC bus voltage ceiling for the half-bridge. The driver supply itself is rated to 17 V maximum — a common rail for gate-drive bias. The 17 V limit means the gate drive voltage for the power switches is capped at that level, which is typical for standard IGBTs and MOSFETs.

Switching speed and gate drive strength

With 400 mA source and 650 mA sink peak current, the L6386ED013TR can drive moderate gate-charge loads without excessive switching losses. The 50 ns rise and 30 ns fall times are a practical middle ground: fast enough to keep crossover conduction short in a half-bridge, but not so aggressive that parasitic ringing becomes unmanageable without careful layout.

Temperature range and environment

Rated for junction temperature from -40°C to 150°C, this driver covers the full industrial temperature range and extends into automotive under-hood applications. The 150°C junction maximum allows operation in high-ambient enclosures or near hot power stages, but thermal design must still keep the junction below that limit.

Package and mounting

Supplied in a 14-SOIC package (0.154" body width, 3.90 mm), the L6386ED013TR is a surface-mount device that fits standard SOIC-14 footprints. The supplier device package is designated 14-SO.

Lifecycle and compliance

The L6386ED013TR is listed as Active in production status and is ROHS3 compliant. For volume or long-term program commitments, the active status means it remains a standard catalog item through STMicroelectronics distribution channels. The ROHS3 compliance covers the current regulatory requirements for lead-free assembly.

Frequently asked questions

What is the recommended operating temperature for L6386ED013TR?

The junction temperature operating range is -40°C to 150°C, covering industrial and automotive under-hood environments.

What are the key gate driver specifications for L6386ED013TR?

Key specifications: half-bridge configuration, 600 V bootstrap, 400 mA source / 650 mA sink peak output, 50 ns rise / 30 ns fall times, 17 V max supply, inverting input logic, 1.5 V VIL / 3.6 V VIH logic thresholds, and -40°C to 150°C operating junction temperature.