Half-bridge driver for 600 V rails — what it handles
The STMicroelectronics L6385ED is a half-bridge gate driver in an 8-SOIC package, designed to drive IGBTs and N-channel MOSFETs in high-side/low-side configurations. Its bootstrap supply handles up to 600 V on the high side.
Switching speed and timing margin
Typical rise time of 50 ns and fall time of 30 ns place this driver in the hard-switched PWM range. The asymmetric fall time (faster turn-off) is deliberate — it reduces cross-conduction during the dead-time interval in a half-bridge.
Temperature grade and deployment environment
Rated for a junction temperature range of -40 to 150 °C, the L6385ED suits applications where ambient heat is a factor — under-hood automotive electronics, industrial motor drives in non-conditioned cabinets, and outdoor telecom power supplies. The 150 °C junction maximum gives headroom for self-heating from the gate-drive current draw in high-duty-cycle operation.
Supply and logic interface
The device accepts a supply voltage up to 17 V maximum. Logic input thresholds are 1.5 V (VIL) and 3.6 V (VIH), meaning it can interface directly with logic from a microcontroller or DSP without external level translation. The inverting input configuration means the output follows the complement of the input signal — factor that into your PWM polarity design.
Package and mounting
Supplied in an 8-SOIC narrow-body package (3.90 mm width) for surface-mount assembly. The small footprint keeps the gate-drive loop tight when the driver is placed close to the power stage — important for minimizing parasitic inductance in the gate drive path.
Lifecycle and sourcing posture
The L6385ED carries an active lifecycle status with ROHS3 compliance. No last-time-buy or end-of-life notice is in effect, so it remains suitable for both new design-ins and existing production BOMs.