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STMicroelectronics FERD40H100STS

ST FERD40H100STS FERD Diode, 100V 40A TO-220AB, 705mV Vf

MPNFERD40H100STS
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STMicroelectronics FERD40H100STS, FERD (Field Effect Rectifier Diode), 100 V reverse, 40 A average, 705 mV forward voltage at 40 A, Fast Recovery ≤ 500 ns, TO-220AB through-hole, 175°C junction, ROHS3 compliant.

$1.48Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
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Specifications

FERD40H100STS Technical Specifications
ParameterValue
Diode typeFERD (Field Effect Rectifier Diode)
Mounting typeThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if705 mV @ 40 A
Current - reverse leakage @ vr190 µA @ 100 V
Current - average rectified40A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-3

Product details

40 A rectifier with a lower Vf floor than a standard Schottky

The STMicroelectronics FERD40H100STS is a 100 V, 40 A Field Effect Rectifier Diode (FERD) in a TO-220AB through-hole package. Its 705 mV typical forward voltage at 40 A is lower than what a conventional 100 V Schottky delivers at that current density, which directly cuts conduction losses in the rectification stage.

At 40 A forward current the Vf is 705 mV, so the conduction loss is about 28 W. That figure sets the heatsink requirement. The junction is rated to 175°C, which gives headroom in a 85°C ambient if the heatsink is sized for the thermal resistance of the TO-220AB tab. Reverse leakage is 190 µA at 100 V — typical for a low-Vf rectifier. The trade-off is that the leakage climbs with junction temperature, so the thermal design should account for the leakage contribution at the operating point.

Active production, ROHS3, through-hole package

The TO-220AB through-hole package is a standard power footprint. For inventory planning, store the tubes in a dry environment — the part is not moisture-sensitive like a surface-mount power package, but the leads should be kept free of oxidation.

FERD vs Schottky — the design trade-off

A FERD (Field Effect Rectifier Diode) uses a field-effect structure to lower the forward voltage below what a planar Schottky of the same voltage rating can achieve. The trade-off is higher reverse leakage at elevated temperature compared to a Schottky. For a 100 V, 40 A output rectifier in a continuous-conduction PFC or a battery charger, the lower Vf saves several watts of conduction loss, which often outweighs the leakage penalty at junction temperatures up to 125°C.

Frequently asked questions

Is FERD40H100STS RoHS compliant?

Yes, it is ROHS3 compliant, meaning it meets the current RoHS exemption-free standard.

What is the difference between FERD and Schottky diode?

A FERD uses a field-effect structure to achieve a lower forward voltage than a conventional Schottky of the same voltage rating. The trade-off is higher reverse leakage at elevated junction temperatures. For a 100 V, 40 A rectifier, the FERD's lower Vf reduces conduction losses in applications like PFC output stages and battery chargers.

What is the operating junction temperature of FERD40H100STS?

The maximum operating junction temperature is 175°C.