BYW51-200

STMicroelectronics

STMicroelectronics BYW51-200, Fast Recovery =< 500ns, > 200mA (Io), 200 V, 10 A per diode, 35 ns trr, 1 Pair Common Cathode, TO-220-3, Through Hole.

STMicroelectronics BYW51-200
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Technical specifications

BYW51-200 specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if850 mV @ 8 A
Current - reverse leakage @ vr15 µA @ 200 V
Current - average rectified (Io) (per diode)10A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-3
Diode configuration1 Pair Common Cathode
Reverse recovery time35 ns

Technical details

Common-cathode fast recovery pair in TO-220-3

The 850 mV forward voltage drop at 8 A keeps conduction losses manageable, while the 150°C maximum junction temperature allows operation in thermally constrained environments such as enclosed power supplies and motor drives.

A 35 ns reverse recovery time places this diode in the fast-recovery class, suitable for switching frequencies up to several hundred kilohertz. In a continuous-conduction-mode boost or flyback converter, the trr directly sets the reverse-recovery charge that the MOSFET must absorb at turn-on; a 35 ns trr keeps that charge low enough to avoid excessive ringing or thermal stress in the active switch. The common-cathode pair lets you wire two diodes with a shared cathode connection, reducing PCB trace inductance in a centre-tapped secondary winding layout.

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BYW51-200
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