BD680

STMicroelectronics

STMicroelectronics BD680 PNP Darlington transistor, 80 V Vce, 4 A Ic, 40 W max, SOT-32-3 (TO-225AA), Through Hole, Tube.

STMicroelectronics BD680
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MOQ 5 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BD680 specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
FET typePNP - Darlington
Voltage - collector emitter breakdown80 V
Current - collector (Ic)4 A
Current - collector cutoff500µA
DC current gain (hFE) (Min) @ ic, vce750 @ 1.5A, 3V
Power - max40 W
Operating temperature150°C (TJ)
PackageTube
CaseTO-225AA, TO-126-3
Vce saturation (Max) @ ib, ic2.5V @ 30mA, 1.5A

Technical details

What the 80 V / 4 A rating means on the bench

The BD680 is a PNP Darlington transistor rated for 80 V collector-emitter breakdown and 4 A continuous collector current, with a maximum power dissipation of 40 W. The Darlington pair inside gives it a DC current gain (hFE) of at least 750 at 1.5 A and 3 V — so a modest base drive of 30 mA can switch a 1.5 A load without the driver stage breaking a sweat. The Vce saturation is 2.5 V max at 30 mA base and 1.5 A collector current — that 2.5 V drop times the load current is the conduction loss you budget for in the heatsink calculation. At 1.5 A, that's 3.75 W of dissipation before you even add the base drive power.

Package and board-fit — SOT-32-3 / TO-225AA

Housed in a SOT-32-3 (also known as TO-225AA or TO-126-3) through-hole package, delivered in a tube. The three-lead layout is standard for medium-power Darlington transistors — the tab is the collector, and the metal back provides a direct thermal path to the heatsink or PCB copper pour. Operating junction temperature is rated to 150 °C, which is the ceiling for the silicon die itself — the case temperature at full 40 W dissipation will be lower, governed by the thermal resistance of the mounting interface.

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