BD139-16

STMicroelectronics

STMicroelectronics BD139-16, NPN transistor, 80 V Vce, 1.5 A Ic, 1.25 W Pd, TO-225AA / SOT-32-3 through-hole package, 150°C junction temperature.

STMicroelectronics BD139-16
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Technical specifications

BD139-16 specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown80 V
Current - collector (Ic)1.5 A
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce40 @ 150mA, 2V
Power - max1.25 W
Operating temperature150°C (TJ)
PackageTube
CaseTO-225AA, TO-126-3
Vce saturation (Max) @ ib, ic500mV @ 50mA, 500mA

Technical details

80 V, 1.5 A NPN — medium-voltage driver staple

The BD139-16 is an NPN epitaxial planar transistor in a TO-225AA (SOT-32-3) through-hole package, rated for 80 V collector-emitter breakdown and 1.5 A continuous collector current. The 1.25 W power dissipation ceiling in this package sets the thermal budget for linear regulator pass elements, relay drivers, and medium-speed switching up to a few hundred milliamps continuous.

Minimum DC current gain of 40 at Ic=150 mA, Vce=2 V means the transistor needs at least 3.75 mA base drive to saturate at that collector current. The Vce(sat) max of 500 mV at 500 mA gives a conduction loss of 250 mW at that point — within the 1.25 W Pd budget but requiring a heatsink if continuous. The 100 nA collector cutoff current is low enough for battery-powered circuits that need the load fully off in the off-state.

BD139-16
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