BAT54FILM

STMicroelectronics

STMicroelectronics BAT54FILM Schottky diode, 40 V DC reverse voltage, 300 mA average rectified current, 5 ns reverse recovery time, SOT-23-3 surface-mount package.

STMicroelectronics BAT54FILM
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MOQ 2 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BAT54FILM specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if900 mV @ 100 mA
Current - reverse leakage @ vr1 µA @ 30 V
Current - average rectified300mA
Operating temperature - junction-40°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologySchottky
CaseTO-236-3, SC-59, SOT-23-3
Capacitance @ vr,10pF @ 1V, 1MHz
Reverse recovery time5 ns

Technical details

What this Schottky diode brings to the board

The STMicroelectronics BAT54FILM is a 40 V, 300 mA Schottky barrier diode in the standard SOT-23-3 surface-mount package. The 10 pF junction capacitance at 1 V keeps signal distortion low in RF and fast-logic applications.

Ratings that define the fit

The 40 V maximum reverse voltage sets the rail ceiling for reverse-polarity blocking and low-side clamping. The 300 mA average rectified current covers typical signal-level loads and auxiliary supply rails; stay within this continuous limit for reliable operation. Forward voltage drops to 900 mV at 100 mA, which is typical for a Schottky in this current class and influences thermal dissipation in tight layouts. Reverse leakage is specified at 1 µA at 30 V, a figure that rises with junction temperature — factor in derating if the board runs near the 150 °C junction maximum. The 5 ns reverse recovery time is the headline switching spec: it allows the diode to turn off fast enough for 100 kHz+ rectifiers and snubber networks without excessive ringing.

Where it goes and what it handles

This diode is a standard building block for low-power DC-DC converter freewheeling paths, reverse-polarity protection on input lines up to 40 V, and signal clamping in I/O protection networks.

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