BAT30KFILM

STMicroelectronics

STMicroelectronics BAT30KFILM Schottky diode, 30 V reverse, 300 mA average rectified, 530 mV forward voltage at 300 mA, SOD-523 package, surface mount, ROHS3 compliant.

STMicroelectronics BAT30KFILM
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BAT30KFILM specifications
Parameter / AttributeSpecification / Value
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)30 V
Voltage - forward (Vf) (Max) @ if530 mV @ 300 mA
Current - reverse leakage @ vr5 µA @ 30 V
Current - average rectified300mA
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-79, SOD-523
Capacitance @ vr,22pF @ 0V, 1MHz

Technical details

Schottky barrier, 30 V, 300 mA — low Vf in a SOD-523

The STMicroelectronics BAT30KFILM is a Schottky barrier diode rated for 30 V reverse voltage and 300 mA average rectified current, housed in a SOD-523 surface-mount package. The forward voltage is 530 mV maximum at 300 mA, which keeps conduction losses low in low-voltage rail rectification and polarity protection circuits.

Switching speed and reverse leakage

Classified as a fast recovery diode with recovery time under 500 ns at forward current above 200 mA, the BAT30KFILM handles high-frequency switching in DC-DC converters and freewheeling diodes without excessive turn-off losses. Reverse leakage is 5 µA at 30 V, typical for a small-signal Schottky — expect leakage to rise with junction temperature, so budget derating in hot environments.

Capacitance and junction temperature

Junction capacitance is 22 pF at 0 V bias and 1 MHz, low enough to avoid signal degradation in RF detector or clamping applications. Maximum junction temperature is 150 °C, giving headroom for reflow soldering and moderate ambient heat.

BAT30KFILM
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