2STR2230

STMicroelectronics

STMicroelectronics 2STR2230 PNP transistor, 30 V Vceo, 1.5 A Ic, 500 mW, SOT-23-3, Tape & Reel / Cut Tape.

STMicroelectronics 2STR2230
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2STR2230 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typePNP
Voltage - collector emitter breakdown30 V
Current - collector (Ic)1.5 A
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce170 @ 500mA, 2V
Power - max500 mW
Frequency - transition100MHz
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic800mV @ 200mA, 2A

Technical details

PNP general-purpose switch, 30 V, 1.5 A in SOT-23-3

The 2STR2230 is a PNP bipolar transistor from STMicroelectronics rated for 30 V collector-emitter breakdown and 1.5 A continuous collector current, housed in the industry-standard SOT-23-3 surface-mount package.

Package footprint and thermal budget

The SOT-23-3 package (also listed as TO-236-3 or SC-59) is a 3-lead footprint common across many small-signal transistors — the same land pattern used for the 2STF2360, so a board-spin is not needed for a drop-in swap. Maximum power dissipation is 500 mW; the junction temperature range spans -65°C to 150°C, covering both cold-start and hot-soak environments without derating.

Saturation voltage and switching performance

Vce(sat) is 800 mV maximum at a forced beta of 10 (200 mA base, 2 A collector) — the conduction loss at peak pulsed current is predictable for relay-drive or solenoid-switching circuits. Collector-base leakage (ICBO) is 100 nA maximum, negligible in a 1.5 A load path but worth noting if the transistor is used in a high-impedance bias network where leakage could shift the operating point.

2STR2230
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