2STD1665T4

STMicroelectronics

STMicroelectronics 2STD1665T4 NPN transistor, 65 V Vce, 6 A Ic, 15 W max, DPAK (TO-252-3) package, Tape & Reel.

STMicroelectronics 2STD1665T4
Download datasheet (PDF)
[IN STOCK] In Stock: 1 pcs
$0.80/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2STD1665T4 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown65 V
Current - collector (Ic)6 A
Current - collector cutoff50nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce150 @ 2A, 1V
Power - max15 W
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vce saturation (Max) @ ib, ic380mV @ 300mA, 6A

Technical details

Active production, 65 V / 6 A switching envelope

The 2STD1665T4: Housed in the DPAK (TO-252-3) surface-mount package, the device's exposed tab provides a low thermal path to the PCB copper plane, supporting the 15 W maximum power dissipation when the board layout provides adequate heatsinking.

Vce(sat) and hFE at load current

With a typical Vce(sat) of 380 mV at 300 mA base drive and 6 A collector current, the conduction loss at full load stays under 2.3 W — the junction temperature rise from this loss, plus ambient, must stay within the 150°C TJ maximum rating. DC current gain is specified at a minimum of 150 at 2 A, 1 Vce, meaning the device maintains useful gain well into the linear region — relevant for pre-regulator pass elements or solenoid drivers where the transistor operates in saturation rather than as a switch.

Off-state leakage and compliance

Collector cutoff current is 50 nA maximum, which keeps the off-state leakage negligible in battery-powered or high-impedance load circuits where even microamps matter. ROHS3 compliant per the manufacturer's declaration, with no exemption conflicts for the DPAK package's leadframe finish.

2STD1665T4
[ALLOC] verified
Quote