SI8261ABD-C-ISR

Skyworks Solutions

Skyworks Solutions SI8261ABD-C-ISR automotive gate-drive digital isolator, capacitive coupling, 5000Vrms isolation, 600mA peak output, AEC-Q100, 6-SOIC wide-body, tape and reel.

Skyworks Solutions SI8261ABD-C-ISR
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[IN STOCK] In Stock: 5 pcs
$5.77/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

Primary Technical Parameters

SI8261ABD-C-ISR key specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - isolation5000Vrms
Voltage - output supply9.4V ~ 30V
Voltage - forward (Vf)2.8V (Max)
Current - peak output600mA
Current - output high, low400mA, 600mA
Current - DC forward (If)30 mA
Operating temperature-40°C ~ 125°C
Pulse width distortion28ns
Approval agencyCQC, CSA, UR, VDE
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)

Additional Specifications

SI8261ABD-C-ISR additional specifications
Parameter / AttributeSpecification / Value
TechnologyCapacitive Coupling
QualificationAEC-Q100
Case6-SOIC (0.295\", 7.50mm Width)
Channels1
Rise (Fall time)5.5ns, 8.5ns
Propagation delay tpLH (tpHL)60ns, 50ns
Common mode transient immunity35kV/µs

Technical details

Automotive gate-drive isolator — 5000Vrms with 35kV/µs CMTI

The Skyworks SI8261ABD-C-ISR is a single-channel gate-drive digital isolator rated for 5000Vrms isolation with a 600mA peak output stage. The 35kV/µs minimum common-mode transient immunity means the output stays clean when the half-bridge switching node slews at full dV/dt — a requirement for traction inverters, on-board chargers, and DC-DC converters in electric and hybrid vehicles. The 9.4V to 30V output supply range accommodates both standard 12V IGBT gate drives and the higher 18-20V rails used with SiC MOSFETs.

Propagation delay and pulse-width fidelity for dead-time budgeting

Maximum propagation delay is 60ns for low-to-high and 50ns for high-to-low transitions. The 28ns max pulse-width distortion means the on-time and off-time remain balanced within that window — important for transformer-coupled topologies and resonant converters where asymmetry creates DC bias on the magnetics. Rise and fall times are 5.5ns and 8.5ns typical, which keeps switching losses low at moderate frequencies. The 400mA/600mA high/low output current capability drives the gate charge of medium-power IGBTs (up to about 600V/50A class) and SiC FETs without an external booster stage.

Package, approvals, and lifecycle reality

Housed in a 6-SOIC wide-body package (0.295-inch body width, 7.50mm) with a 6-SDIP Gull Wing supplier package designation. The wide-body format provides the 8mm minimum creepage distance needed to sustain the 5000Vrms reinforced isolation rating across the barrier. Surface-mount mounting, supplied in tape-and-reel or cut-tape format.

SI8261ABD-C-ISR
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